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News
50V MOSFET Gate-Driver ICs from Diodes Incorporated Address Demand for Driving Battery-Powered BLDC Motors
2017-05-02 | ReturnLogic level inputs (from 2.5V) allow the DGD0506 and DGD0507 drivers to be directly controlled from 3.3V MCUs, while the output steps up to the VCC supply (8V to 14V) to ensure the MOSFET is fully enhanced to reduce conduction losses. With 1.8A source and 2.5A sink current capability, these drivers minimize switching time of very low RDS(ON) MOSFETS, including Diodes’ own DMT4002LPS, increasing overall system efficiencies.
The DGD0506 and DGD0507 gate drivers integrate a bootstrap diode to reduce component count and, along with the small form-factor 3mm x 3mm DFN3030 package, benefits space- and weight-constrained applications. Requiring only a single input, the DGD0506 half-bridge minimizes MCU GPIO pin count along with the design flexibility to program deadtime from 70ns to 420ns. For shorter deadtimes, the DGD0507 has separate high- and low-side inputs enabling higher switching frequencies with a 35ns max propagation delay that is matched within 5ns. This, along with cross-conduction prevention logic, protects the MOSFETs by ensuring that the high and low outputs are not both on at the same time. Undervoltage lockout (UVLO) circuitry also protects the MOSFETs against a loss of supply.
In the DFN3030 package, the DGD0506 and DGD0507 offer a pin-for-pin alternative to popular industry types. Further information is also be available at www.diodes.com.
Related Files
DGD0506 7 IPR 0517 95 KB: Uploads (pdf file)
/assets/Uploads/DGD0506-7-IPR-0517.pdf
Source:http://www.diodes.com/