TOKYO–Toshiba Corporation's (TOKYO: 6502) Storage & Electronic Devices Solutions Company today announced that it is meeting customer requirements for a wider variety of output and input methods and functions by adding 19 products to its line-up of new-generation transistor arrays equipped with DMOS FET[1] outputs. The new devices join the 37 products in the TBD62xxxA series, which have found wide application in areas including motors, relays, LEDs, and level shifters for control communication lines. Sample shipments start today, and the new products will be introduced sequentially.

Products currently in mass production are mainly High-active (H-active) type products in which output is turned on if H level is input. Toshiba is now adding Low-active (L-active) products in which output is turned on if L level is input. L-active products are well suited to level shifters for control communication lines in industrial equipment, amusement equipment and home appliances.


In addition, Toshiba is also adding to the line-up the TBD62381A series, which realizes low power consumption by modifying characteristics of in-line products TBD62083A series.


Alongside TBD62089APG, a sink-output type transistor array equipped with D-type Flip Flop circuits (8-bit type) in the input, which has been in mass production since January, Toshiba has also added a source-output type transistor array, TBD62789APG, in response to demand from the amusement and industrial equipment field.

Combining sink-output type and source-output type transistor arrays is suitable for supplying power source and constructing ON and OFF control systems in electric lighting applications.

Main Features of New Products

1. Offers products with two input types according to the needs

H-active products input control signals directly from the CPU (for the motor drive, the relay drive, the LED drive, etc.), while L-active products input control signals via an open drain configuration circuit (for level shift in the control communication line, etc.).

2.

Offers two output type products: the source output type used for switching power supply and the sink output type used for ON / OFF control. Dynamic control of the LED matrix is possible by combination of source output and sink output.

3. High efficiency drive

New-generation transistor arrays, “TBD62XXX” series cut power loss by about 40% [2] compared to preceding TD62XXX series.

4. High-voltage, large-current drive

Absolute maximum output rating is 50V/0.5A

5. Packages for various applications

The line-up includes DIP packages, where there is strong demand for the hobby goods, amusement and industrial equipment fields; SOL packages that support surface mounting; and small SSOP packages (0.65 mm pin pitch) suitable for saving space in set products.

Applications

Industrial equipment (vending machines, banking terminals such as ATMs, office automation equipment, and factory automation equipment), amusement equipment (pachinko and slot machines), home appliances (air-conditioners and refrigerators), etc.

Product Line-up

Part number		Output type	No. of Channels	Output	Output ON resistance	Common diode	Input type	Package	Sample release schedule	Previous products
TBD62304A	PG	Sink	7ch	50V 0.5A	2Ω (typ.)	-	L-active (buffer)	DIP16	March 2017	TD62304APG
	FNG							SSOP16		TD62304AFNG
	FWG							SOL16		TD62304AFG
TBD62387A	PG		8ch	50V 0.5A	2Ω (typ.)	Built-in	L-active (buffer)	DIP20	March 2017	TD62387APG
	FNG							SSOP20		TD62387AFNG
TBD62384A	PG		8ch	50V 0.5A	2Ω (typ.)	-	L-active (buffer)	DIP18	April 2017	TD62382APG TD62384APG
	FNG							SSOP18		TD62382AFNG
	FWG							SOL18		TD62382AFG TD62384AFG
TBD62381A	PG		8ch	50V 0.5A	1Ω (typ.)	-	H-active (inverter)	DIP18	March 2017	TD62381PG
	FNG							SSOP18		TD62381FNG
	FWG							SOL18		TD62381FG
TBD62781A	PG	Source	8ch	50V 0.5A	1.6Ω (typ.)	-	H-active (buffer)	DIP18	April 2017	TD62781APG
	FWG							SOL18		TD62781AFG
TBD62785A	PG		8ch	50V 0.5A	1.6Ω (typ.)	-	L-active (inverter)	DIP18	May 2017	TD62785PG
	FWG							SOL18		TD62785FG
TBD62786A	PG		8ch	50V 0.5A	1.6Ω (typ.)	Built-in	L-active (inverter)	DIP18	June 2017	TD62786APG
	FNG							SSOP18		TD62786AFNG
	FWG							SOL18		TD62786AFG
TBD62789A	PG		8ch	50V 0.5A	2Ω (typ.)	Built-in	H-active (data storage function)	DIP20	March 2017	-

[1]: DMOS FET: Double-Diffused MOSFET

[2]: In the condition of Ta=25℃ and IOUT is 200mA.

Source：http://www.semicon.toshiba.co.jp/eng/